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Same model may have multiple batches, images only for reference.
MS1337
Same model may have multiple batches, images only for reference.

MS1337

Part No MS1337
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description RF TRANS NPN 18V 175MHZ M113 / RF Transistor NPN 18V 8A 175MHz 70W Chassis Mount M113
Datasheet
MS1337 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Manufacturer Microsemi Corporation
Packaging Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 18V
Frequency - Transition 175MHz
Gain 10dB
Power - Max 70W
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 250mA, 5V
Current - Collector (Ic) (Max) 8A
Temperature Range - Operating 200°C (TJ)
Mounting Chassis Mount
Case / Package M113
Supplier Device Package M113
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN OBSOLETE
HTSUS 0000.00.0000
Other Part Number MS1337-ND,150-MS1337
Standard Package 1
Win Source Part Number 1325037-MS1337
Ultra Librarian 3D Model Ultra Librarian MS1337 CAD Model

Description

The Microsemi Corporation MS1337 is an NPN bipolar RF transistor that is designed for use in a variety of applications.

  • Maximum Power Rating: 70W
  • Maximum Collector-Emitter Breakdown Voltage: 18V
  • Gain: 10dB
  • Transition Frequency: 175MHz
  • DC Current Gain: 20 @ 250mA and 5V
  • Mounting: Chassis Mounting
  • Temperature Range: 200°C

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