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Same model may have multiple batches, images only for reference.
UTV200
Same model may have multiple batches, images only for reference.

UTV200

Part No UTV200
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description RF TRANS NPN 28V 860MHZ 55JV  /  RF Transistor NPN 28V 4.5A 470MHz ~ 860MHz 80W Chassis Mount 55JV
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr Microsemi Corporation
Package Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 28V
Frequency - Transition 470MHz ~ 860MHz
Gain 8.5dB ~ 9.5dB
Power - Max 80W
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A, 5V
Current - Collector (Ic) (Max) 4.5A
Temperature Range - Operating 200°C (TJ)
Mounting Type Chassis Mount
Package / Case 55JV
Supplier Device Package 55JV
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN OBSOLETE
HTSUS 0000.00.0000
Other Names 150-UTV200,UTV200-ND
Standard Package 1
Win Source Part Number 1103550-UTV200
Ultra Librarian 3D Model Ultra Librarian UTV200 CAD Model

Description

The UTV200 transistor is an NPN bipolar junction transistor (BJT) that is used in radio frequency (RF) applications.

  • Power Rating: 80W
  • Voltage Rating: 28V
  • Collector Current (Ic): 4.5A
  • Gain: 8.5dB ~ 9.5dB
  • DC Current Gain (hFE): 10 @ 1A, 5V
  • Transition Frequency: 470MHz ~ 860MHz
  • Mounting: Chassis mount
  • Package/Case: 55JV
  • Operating Temperature Range: 200°C (TJ)
  • Manufacturer: Microsemi Corporation

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