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2SA1368

Part No 2SA1368
Manufacturer Mitsubishi
Catalog OEM Parts (0 - 9)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1036562-2SA1368
Categories OEM Parts(0-9)
Manufacturer Mitsubishi
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SA1368 CAD Model

Description

The 2SA1368 is a PNP silicon epitaxial transistor manufactured by Mitsubishi Electric. It is designed for use in audio power amplifier applications, particularly in the output stages where high power and low distortion are required. This transistor is capable of delivering significant power while maintaining excellent linearity and low noise characteristics.

Applications

  • Audio power amplifiers
  • Hi-Fi audio systems
  • Home theater systems
  • Professional audio equipment
  • Linear amplifiers

Features

  • PNP silicon epitaxial transistor
  • High collector power dissipation
  • Low distortion
  • Excellent linearity
  • High current capability
  • High transition frequency

Benefits

  • Delivers high power output with minimal distortion
  • Provides clear and accurate sound reproduction
  • Suitable for high-end audio applications
  • Ensures stable and reliable performance
  • Can handle large signal swings without clipping

Additional Details

The 2SA1368 is typically packaged in a TO-3P or similar high-power package, designed for efficient heat dissipation. The high collector power dissipation allows it to handle significant power levels in audio amplifier circuits. Its excellent linearity and low distortion characteristics are crucial for achieving high-fidelity audio reproduction. The high current capability enables it to drive low-impedance loads effectively. The high transition frequency ensures good performance at audio frequencies and beyond. Careful attention to thermal management is essential for reliable operation at high power levels. This transistor is often used in complementary pairs with an NPN transistor to form a push-pull output stage, maximizing power output and efficiency. The base current and voltage should be chosen carefully to ensure that the transistor operates within its safe operating area.

Specific electrical parameters to consider include collector-emitter voltage (VCEO), collector current (IC), base current (IB), collector power dissipation (PC), and transition frequency (fT). Consult the Mitsubishi datasheet for comprehensive specifications, application notes, and recommended biasing techniques. Proper heat sinking is essential to prevent thermal runaway and ensure long-term reliability.

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