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NM27C32BQE150

Part No NM27C32BQE150
Manufacturer National Semiconductor (TI)
Catalog OEM Parts (M - N)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1015981-NM27C32BQE150
Categories OEM Parts(M-N)
Manufacturer National Semiconductor (TI)
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian NM27C32BQE150 CAD Model

Description

The NM27C32BQE150 is a 32K (4096 x 8) UV Erasable PROM (EPROM) manufactured by National Semiconductor, which is now part of Texas Instruments (TI). This EPROM is a non-volatile memory device that can be electrically programmed and erased using ultraviolet light. It is typically used in applications requiring firmware storage, boot code, and programmable logic.

Applications:

  • Embedded Systems: Used in embedded systems to store firmware, boot code, and configuration data.
  • Industrial Control Systems: Employed in industrial control systems for storing control algorithms and calibration parameters.
  • Instrumentation: Integrated into instrumentation equipment for storing measurement data and calibration settings.
  • Legacy Computing Devices: Found in older computer systems for storing BIOS and other system-level software.

Features:

  • UV Erasable: Can be erased using ultraviolet light, allowing for reprogramming.
  • Non-Volatile Memory: Retains data even when power is removed.
  • High Speed: Offers a 150ns access time, enabling fast data retrieval.
  • Low Power Consumption: Designed for low power consumption, suitable for battery-powered applications.
  • Wide Operating Voltage: Operates over a wide voltage range, providing flexibility in system design.

Benefits:

  • Reprogrammable Memory: Allows for firmware updates and code modifications.
  • Reliable Data Storage: Ensures reliable data storage for critical applications.
  • Fast Access Time: Enables quick data retrieval, improving system performance.
  • Low Power Operation: Extends battery life in portable devices.

Additional Details:

The NM27C32BQE150 requires a specific programming voltage (typically around 12.5V) to write data into the memory cells. The device is erased by exposing it to ultraviolet light with a wavelength of 253.7 nm through a quartz window on the package. The erasure time is typically around 20-30 minutes. The device is packaged in a ceramic DIP (Dual In-Line Package) with a transparent quartz window for erasure. Datasheets should be consulted for precise programming and erasure procedures and electrical characteristics.

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