The 2SA733 is a silicon PNP epitaxial transistor manufactured by NEC. It is designed for low-noise amplifier applications and general-purpose switching. Its key features include low noise figure and high current gain. The /JD suffix typically indicates a specific gain range or manufacturing variation.

Applications

• Low-noise amplifier stages
• General-purpose switching circuits
• Audio preamplifiers
• Signal processing circuits

Features

• PNP Silicon Epitaxial Transistor
• Low Noise Figure
• High Current Gain (hFE)
• Low Collector-Emitter Saturation Voltage

Benefits

• Improved Signal Clarity: Low noise figure ensures minimal added noise in amplifier circuits, resulting in a cleaner and clearer signal.
• Efficient Amplification: High current gain allows for efficient amplification of weak signals.
• Low Power Consumption: Low saturation voltage minimizes power loss in switching applications.
• Versatile: Suitable for a broad range of low-power amplification and switching applications.

Technical Specifications

The 2SA733 typically has a collector-emitter voltage (VCEO) of -50V, a collector current (IC) of -0.15A, and a collector power dissipation (PC) of 0.25W. The DC current gain (hFE) typically ranges from 100 to 400, depending on the operating conditions and gain classification (indicated by the suffix). The noise figure (NF) is typically around 4dB. It is available in a TO-92 package. Consult the specific datasheet for the /JD variant for the most precise specifications.