The 2SB1261-Z-E1-AZ K is a PNP silicon epitaxial transistor manufactured by NEC. This transistor is designed for power amplifier and switching applications. Known for its high collector current and low saturation voltage, it's commonly used in audio amplifiers, motor control circuits, and DC-DC converters.

Applications:

• Audio power amplifiers
• Motor control circuits
• DC-DC converters
• Switching regulators
• High-current switching

Features:

• High collector current (IC = -3A)
• Low saturation voltage (VCE(sat))
• High power dissipation
• Fast switching speed
• Excellent current gain linearity

Benefits:

• Provides high power output in audio applications.
• Enables efficient motor control with precise current regulation.
• Improves efficiency in DC-DC converters due to low saturation voltage.
• Suitable for high-frequency switching applications.
• Reduces distortion in amplifier circuits due to excellent current gain linearity.

Specifications:

Collector-Base Voltage (VCBO): -60V

Collector-Emitter Voltage (VCEO): -50V

Emitter-Base Voltage (VEBO): -6V

Collector Current (IC): -3A

Peak Collector Current (ICM): -5A

Collector Dissipation (PC): 1.5W

DC Current Gain (hFE): 80 to 240

Transition Frequency (fT): 80 MHz

The 2SB1261-Z-E1-AZ K from NEC is a reliable transistor for power amplification and switching duties. Its performance parameters make it a suitable choice for various industrial and consumer electronic applications.