The 2SC1623-D-T1-A is a silicon NPN epitaxial planar transistor manufactured by NEC. It is designed for low-noise amplifier applications and high-speed switching. This transistor is characterized by its high gain and low noise figure, making it suitable for sensitive signal amplification and high-frequency circuits.

Applications:

• Low-noise amplifiers (LNAs)
• High-frequency amplifiers
• Oscillators
• Mixers
• Switching circuits

Features:

• NPN epitaxial planar transistor
• Low noise figure (NF = 1.8 dB typ. at f = 1 GHz)
• High gain (hFE = 100-400 at VCE = 5V, IC = 1 mA)
• High transition frequency (fT = 1.2 GHz typ.)
• Small signal amplifier

Benefits:

• Improved signal sensitivity in low-noise applications
• Enhanced amplification performance at high frequencies
• Stable oscillation performance
• Reduced signal distortion
• Efficient switching characteristics

Additional Details:

The 2SC1623-D-T1-A has a collector-emitter voltage (VCEO) of 25V, a collector-base voltage (VCBO) of 30V, and an emitter-base voltage (VEBO) of 3V. The collector current (IC) is rated at 50mA. The power dissipation (PC) is 200mW. It is typically available in a small surface-mount package. The operating junction temperature ranges from -55°C to +150°C.

This transistor is commonly used in applications where a low noise figure and high gain are critical. Its robust design and electrical characteristics make it a suitable choice for communication devices, measuring instruments, and other high-performance electronic devices.