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2SC4954

Part No 2SC4954
Manufacturer NEC
Catalog Hard To Find
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
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Rohs State rohs
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Manufacturer NEC
Win Source Part Number 1125795-2SC4954
Manufacturer Homepage www.nec.com/
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SC4954 CAD Model

Description

The 2SC4954 is a silicon NPN epitaxial planar transistor manufactured by NEC. It is primarily designed for use in high-frequency amplifier applications, particularly in VHF and UHF bands. This transistor offers high gain and low noise characteristics, making it suitable for sensitive receiver front-ends and signal amplification.

Applications

  • VHF/UHF Amplifiers
  • Low Noise Amplifiers (LNAs)
  • Oscillators
  • Mixers

Features

  • High Transition Frequency (fT): Enables high-speed amplification in VHF and UHF bands.
  • Low Noise Figure: Ensures minimal noise contribution in sensitive receiver applications.
  • High Gain: Provides excellent signal amplification.
  • Small Signal Amplification: Suitable for amplifying small signals with minimal distortion.

Benefits

  • Improved Receiver Sensitivity: The low noise figure enhances the receiver's ability to detect weak signals.
  • Enhanced Signal Amplification: High gain provides robust amplification for better signal quality.
  • Stable Performance: Designed to maintain stable performance in high-frequency environments.
  • Versatile Use: Suitable for various high-frequency applications, including amplification and oscillation.

Additional Details

The 2SC4954 is typically supplied in a small surface-mount package. It has a collector-emitter voltage (VCEO) of around 15V, collector current (IC) of approximately 50mA, and power dissipation (PC) of around 200mW. Its transition frequency (fT) is typically in the GHz range, making it suitable for RF applications. The noise figure (NF) is typically around 1.5 dB at 1 GHz. The operating temperature typically ranges from -55°C to +150°C. This transistor provides a good balance of high-frequency performance and low noise, making it a suitable choice for a range of RF applications, especially in receiver front-ends.

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