The 2SD1007T2 is a silicon NPN epitaxial planar transistor manufactured by NEC. This transistor is designed for high-current switching applications.

Applications

• High-current switching circuits
• Power amplifiers
• DC-DC converters
• Motor control circuits

Features

• High Collector Current: Designed to handle substantial collector current.
• Low Saturation Voltage: Minimizes power loss during switching operations.
• High fT: Offers good high-frequency performance.
• Epitaxial Planar Construction: Provides excellent reliability and performance consistency.

Benefits

• Efficient Switching: Low saturation voltage allows for efficient power conversion.
• Robust Performance: High collector current capability enables use in demanding applications.
• Reliable Operation: Epitaxial planar construction ensures long-term stability.
• Simplified Circuit Design: Easy to integrate into various circuit designs due to its standard packaging and characteristics.

Technical Specifications

While specific detailed specifications can vary based on the exact manufacturing batch, typical parameters include:

• Collector-Emitter Voltage (VCEO): Usually rated at a minimum voltage to withstand voltage spikes.
• Collector Current (IC): Specified maximum continuous collector current.
• Power Dissipation (PD): Maximum allowable power dissipation at a specific ambient temperature.
• DC Current Gain (hFE): Specified range of DC current gain, indicating amplification capability.
• Transition Frequency (fT): Indicates the transistor's high-frequency performance.

It is commonly packaged in a surface-mount package, facilitating automated assembly. For precise specifications, refer to the official NEC datasheet for the 2SD1007T2.