The 2SK1752 is an N-channel MOS field-effect transistor (MOSFET) manufactured by NEC. It is designed for high-frequency applications requiring low noise and high gain, making it suitable for use in RF amplifiers, especially in VHF and UHF bands. The 2SK1752 is often utilized in the front-end stages of receivers to amplify weak signals with minimal added noise.

Applications

• VHF/UHF RF Amplifiers
• Front-End Receivers
• Oscillators
• Mixers
• Communication Systems

Features

• N-Channel MOSFET
• High Gain
• Low Noise Figure
• High Input Impedance
• Small Signal Amplifier

Benefits

• Enhanced signal reception sensitivity
• Reduced noise interference in amplified signals
• Improved overall performance in communication systems
• Easy integration into existing circuit designs
• Stable operation in high-frequency environments

Additional Details

The 2SK1752 operates with specified gate-source and drain-source voltage ranges to optimize its performance. It has a low gate capacitance, contributing to its high-frequency capabilities. The MOSFET is designed to minimize noise while providing substantial gain, which is crucial for amplifying weak signals in receiver circuits. Its high input impedance helps reduce signal loading and improve overall signal integrity. NEC's manufacturing processes ensure consistent performance and reliability. The device is typically used in applications where signal clarity and low noise are paramount, making it an ideal choice for sensitive receiver front-ends. It is also designed to operate within defined temperature and power dissipation limits for stable and reliable operation.