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Same model may have multiple batches, images only for reference.
NE722S01-T1B
Same model may have multiple batches, images only for reference.

NE722S01-T1B

Part No NE722S01-T1B
Manufacturer NEC
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFETs C-X Band GaAs MESFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SO
Continuous Drain Current (ID) 120 mA
Drain to Source Breakdown Voltage 5 V
Drain to Source Voltage (Vdss) 5 V
Frequency 4 GHz
Gain 12 dB
Gate to Source Voltage (Vgs) -5 V
Maximum Operating Temperature 125 °C
Max Power Dissipation 250 mW
Power Dissipation 250 mW
RoHS Compliant
Win Source Part Number 1082002-NE722S01-T1B
Categories Transistors - FETs, MOSFETs - RF
Manufacturer NEC
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian NE722S01-T1B CAD Model

Description

The NEC 1082002-NE722S01-T1B is a high-performance RF transistor that is used in various electronic devices.

  • Manufacturer: NEC
  • Category: Transistors - FETs, MOSFETs - RF
  • Supply and Demand Status: Shortage
  • Mounting: SMD (SMT)
  • Drain to Source Voltage (Vdss): 5V
  • Frequency: 4 GHz
  • Power Dissipation: 250 mW
  • Gain: 12 dB
  • Case/Package: SO
  • RoHS Compliance: RoHS compliant
  • Max Operating Temperature: 125 °C

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,432 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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