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RD30M-T1B-A/JM

Part No RD30M-T1B-A/JM
Manufacturer NEC
Catalog HOT - SALES and EOL Components (Q - R)
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Manufacturer NEC
Win Source Part Number 292006-RD30M-T1B-A/JM
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RD30M-T1B-A/JM CAD Model

Description

The RD30M-T1B-A/JM is a UHF power MOS FET transistor manufactured by NEC, designed for use in land mobile communications equipment operating in the 800 MHz band. This transistor is specifically engineered to deliver high power output with excellent efficiency and reliability, making it suitable for demanding applications in wireless communication systems.

Applications:

  • Land Mobile Radio (LMR) systems
  • 800 MHz band communication devices
  • UHF transmitters
  • Base stations
  • Repeaters

Features:

  • High power output: Delivers significant RF power for extended communication range.
  • High efficiency: Minimizes power consumption and heat dissipation.
  • High gain: Provides strong signal amplification.
  • Excellent linearity: Ensures low distortion and clean signal transmission.
  • Designed for 800 MHz operation: Optimized performance within the specified frequency band.
  • MOS FET technology: Offers superior ruggedness and reliability compared to bipolar transistors.
  • Small size: Compact design for easy integration into various systems.

Benefits:

  • Extended communication range: High power output allows for reliable communication over greater distances.
  • Reduced power consumption: High efficiency minimizes energy waste and operating costs.
  • Improved signal quality: Excellent linearity ensures clear and distortion-free communication.
  • Enhanced system reliability: MOS FET technology provides robust performance in demanding environments.
  • Simplified system design: Compact size and ease of integration streamline the development process.

Additional Details:

The RD30M-T1B-A/JM transistor utilizes advanced MOS FET technology to achieve high power amplification with exceptional efficiency. Its design is specifically tailored for use in UHF land mobile radio applications, ensuring optimal performance within the 800 MHz frequency band. This transistor is commonly used in base stations, repeaters, and mobile radio units to provide reliable and high-quality communication links. It's crucial to consult the official NEC datasheet for detailed electrical characteristics, application notes, and handling precautions before using this component in any design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.8304 $64.9824
13+ $8.8866 $115.5258
21+ $8.6094 $180.7974
28+ $8.3310 $233.2680
36+ $8.0538 $289.9368
48+ $7.2199 $346.5552
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,590 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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