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UPA1870GR(1)-9JG-E1-A-U

Part No UPA1870GR(1)-9JG-E1-A-U
Manufacturer NEC
Catalog HOT - SALES and EOL Components (U - Z)
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Rohs State rohs
ECAD Module
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Manufacturer NEC
Win Source Part Number 389232-UPA1870GR(1)-9JG-E1-A-U
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UPA1870GR(1)-9JG-E1-A-U CAD Model

Description

The UPA1870GR(1)-9JG-E1-A-U is a power MOSFET from NEC (now Renesas Electronics). This component is likely a variant of the UPA1870GR series, designed for efficient power switching. Key features include low on-resistance and fast switching speed, commonly found in DC-DC converters and power management applications. The '-U' suffix may indicate unique packaging or testing variations.

Applications:

  • DC-DC converters
  • Power management circuits
  • Load switches
  • Battery charging circuits
  • Point-of-load (POL) regulators

Features:

  • Low on-resistance: Minimizes conduction losses, increasing overall efficiency.
  • High-speed switching: Reduces switching losses, improving efficiency at higher frequencies.
  • Logic-level gate drive: Simplifies interfacing with logic circuits, reducing component count.
  • Surface-mount package: Enables automated assembly and compact designs.
  • RoHS compliant: Complies with Restriction of Hazardous Substances directive.

Benefits:

  • Increased efficiency: Low on-resistance and fast switching reduce power losses.
  • Simplified design: Logic-level gate drive simplifies interfacing.
  • Compact design: Surface-mount package enables smaller board layouts.
  • Improved thermal performance: Efficient operation reduces heat generation.
  • Environmentally friendly: RoHS compliance ensures environmentally responsible design.

Technical Specifications:

While the exact specifications can vary depending on the specific batch and manufacturer datasheet revision, typical specifications include:

  • Drain-Source Voltage (V DSS): Typically around 30V
  • Gate-Source Voltage (V GS): Typically +/- 20V
  • Continuous Drain Current (I D): Several Amperes, depending on package thermal resistance
  • On-Resistance (R DS(on)): Very low, in the milliohm range (dependent on V GS and I D)
  • Gate Threshold Voltage (V GS(th)): Suitable for logic-level driving
  • Total Gate Charge (Q g): Low value to facilitate fast switching

Consult the manufacturer's datasheet for precise specifications and application guidelines.

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