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UPD411D-2

Part No UPD411D-2
Manufacturer NEC
Catalog HOT - SALES and EOL Components (U - Z)
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Manufacturer NEC
Win Source Part Number 391976-UPD411D-2
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian UPD411D-2 CAD Model

Description

The UPD411D-2 is a 1024-bit Static Random Access Memory (SRAM) chip manufactured by NEC. SRAM offers faster speeds and simpler control circuitry compared to DRAM, but it is typically more expensive per bit. The UPD411D-2 is designed for applications where speed and ease of use are prioritized.

Applications:

  • Cache Memory: Used in cache memory systems of early microprocessors and controllers.
  • Buffer Memory: Employed as buffer memory in various electronic devices.
  • Control Stores: Found in the control units of older computer systems.
  • Instrumentation Equipment: Integrated in test and measurement instruments.
  • Embedded Systems: Used in embedded systems where fast data access is crucial.

Features:

  • Capacity: 1024 bits (1Kbit)
  • Organization: Typically organized as 128 words x 8 bits.
  • Access Time: Offers fast access times, typically in the range of 45ns to 70ns depending on the specific grade.
  • Static Operation: No refresh cycles are required to maintain data.
  • Low Power Consumption: Relatively low power consumption compared to DRAM.
  • Package: Typically available in a DIP (Dual In-line Package).

Benefits:

  • Fast Access Speed: Provides rapid data access, improving overall system performance.
  • Simple Interface: Easy to interface with microprocessors and other digital circuits.
  • No Refresh Required: Simplifies memory management and reduces system overhead.
  • Low Power Consumption: Minimizes power usage, making it suitable for battery-powered applications.

Additional Details:

The UPD411D-2 utilizes static storage cells, which retain data as long as power is supplied. The operating voltage is typically 5V. The operating temperature range is generally from 0°C to 70°C. It is important to handle this component carefully to avoid electrostatic discharge (ESD) damage. Refer to the manufacturer's datasheet for complete electrical and timing specifications. The absence of refresh cycles makes the UPD411D-2 a simpler memory solution to implement compared to dynamic RAM.

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