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2N7002F,215 Nexperia USA Inc. 2N7002F,215 real image
Same model may have multiple batches, images only for reference.
2N7002F,215 Nexperia USA Inc. 2N7002F,215 real image
2N7002F,215 Nexperia USA Inc. 2N7002F,215 real image
Same model may have multiple batches, images only for reference.

2N7002F,215

Part No 2N7002F,215
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 475MA SOT23
Datasheet
2N7002F,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 475mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 0.69nC @ 10V
Max Input Capacitance 50pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 830mW (Ta)
Maximum Rds On at Id,Vgs 2 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1004058-2N7002F,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2N7002F,215 CAD Model

Description

The Nexperia USA Inc. 1004058-2N7002F,215 is a N-channel MOSFET transistor that has a maximum power dissipation of 830mW.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 475mA @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 2 Ohm @ 500mA, 10V
  • Package: TO-236AB (SOT23)
  • Dimension: TO-236-3, SC-59, SOT-23-3
  • Operating Temperature: -55°C to 150°C (TJ)

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790+ $0.1464 $115.6560
1,225+ $0.1418 $173.7050
1,685+ $0.1371 $231.0135
2,180+ $0.1326 $289.0680
2,920+ $0.1189 $347.1880
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