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Same model may have multiple batches, images only for reference.
BC856B-QVL
Same model may have multiple batches, images only for reference.

BC856B-QVL

Part No BC856B-QVL
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS PNP 65V 0.1A TO236AB
Datasheet
BC856B-QVL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Power - Max 250 mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB
Base Product Number BC856
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1377044-BC856B-QVL
Ultra Librarian 3D Model Ultra Librarian BC856B-QVL CAD Model

Description

The BC856B-QVL is a PNP bipolar transistor manufactured by Nexperia USA Inc.

  • Series: Automotive, AEC-Q101
  • Package: TO-236-3, SC-59, SOT-23-3
  • Maximum Collector Current (Ic): 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 65V
  • DC Current Gain (hFE): 220 @ 2mA and 5V
  • Saturation Voltage (Vce Saturation): 650mV @ 5mA and 100mA
  • Collector Cutoff Current: 15nA
  • Transition Frequency: 100MHz
  • Power Dissipation: 250mW

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