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BC856BMBYL

Part No BC856BMBYL
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS PNP 60V 0.1A DFN1006B-3  /  Bipolar (BJT) Transistor PNP 60 V 100 mA 100MHz 250 mW Surface Mount DFN1006B-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Power - Max 250 mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 3-XFDFN
Supplier Device Package DFN1006B-3
Base Product Number BC856
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 568-13116-2-ND,568-13116-1-ND,568-13116-6,568-13116-1,1727-2637-6,568-13116-2,BC856BMBYL-ND,1727-2637-2,934069543315,1727-2637-1,568-13116-6-ND
Standard Package 10,000
Win Source Part Number 994130-BC856BMBYL
Ultra Librarian 3D Model Ultra Librarian BC856BMBYL CAD Model

Description

The Nexperia USA Inc. BC856BMBYL is a PNP bipolar transistor with a maximum power of 250 mW and a voltage collector emitter breakdown (Max) of 60 V.

  • Current Collector (Ic) (Max): 100 mA
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 500μA, 10mA
  • Case/Package: 3-XFDFN
  • Operating Temperature Range: 150°C (TJ)
  • MSL Level: unlimited

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5865 $52.7850
210+ $0.4813 $101.0730
325+ $0.4662 $151.5150
445+ $0.4512 $200.7840
575+ $0.4361 $250.7575
770+ $0.3910 $301.0700
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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