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Same model may have multiple batches, images only for reference.
BSP110,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BSP110,115

Part No BSP110,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 520MA SOT223
Datasheet
BSP110,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 520mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 40pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.25W (Tc)
Maximum Rds On at Id,Vgs 10 Ohm @ 150mA, 5V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1024424-BSP110,115
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian BSP110,115 CAD Model

Description

The Nexperia USA Inc. BSP110,115 is a high-quality N-channel MOSFET that is suitable for a range of electronic circuits.

  • Maximum Power Dissipation: 6.25W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 520mA
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Input Capacitance @ 10V: 40pF
  • Package: SOT-223
  • Maximum Rds On @ 150mA, 5V: 10 Ohm

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.9025 $63.2200
18+ $6.4842 $116.7156
28+ $6.2820 $175.8960
38+ $6.0799 $231.0362
50+ $5.8766 $293.8300
66+ $5.2691 $347.7606
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Availability: 36,000 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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