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Same model may have multiple batches, images only for reference.
SSM3J306T(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3J306T(TE85L,F)

Part No SSM3J306T(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2.4A TSM
Datasheet
SSM3J306T(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Max Gate Charge 2.5nC @ 15V
Max Input Capacitance 280pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 117 mOhm @ 1A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSM
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 096195-SSM3J306T(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3J306T(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage 096195-SSM3J306T(TE85L,F) is a P-Channel MOSFET with a maximum drain-source breakdown voltage of 30V.

  • Maximum Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 117 mOhm @ 1A, 10V
  • Drive Voltage: 4V and 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 2.5nC @ 15V
  • Supply and Demand Status: limited
  • Important: purchase from a reliable supplier

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102+ $3.4107 $347.8914
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