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BSR33,135

Part No BSR33,135
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS PNP 80V 1A SOT89  /  Bipolar (BJT) Transistor PNP 80 V 1 A 100MHz 1.35 W Surface Mount SOT-89
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Nexperia USA Inc.
Package Tape & Reel
Transistor Type PNP
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V
Power - Max 1.35 W
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-243AA
Supplier Device Package SOT-89
Base Product Number BSR33
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 568-6966-6,933418140135,568-6966-1-ND,568-6966-6-ND,568-6966-2-ND,BSR33,135-ND,1727-5494-6,1727-5494-1,1727-5494-2,568-6966-1,568-6966-2
Standard Package 4,000
Win Source Part Number 1049715-BSR33,135
Ultra Librarian 3D Model Ultra Librarian BSR33,135 CAD Model

Description

The BSR33,135 is a PNP bipolar transistor designed for discrete semiconductor products such as single transistors.

  • Maximum Power: 1.35W
  • Voltage Collector Emitter Breakdown: 80V
  • Maximum Collector Current: 1A
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Frequency-Transition: 100MHz
  • Package: TO-243AA
  • Supplier Device Package: SOT-89
  • Packaging: tape & reel
  • Standard Package: 4,000
  • Manufacturer: Nexperia USA Inc.

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