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Same model may have multiple batches, images only for reference.
TK28N65W,S1F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK28N65W,S1F

Part No TK28N65W,S1F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 27.6A TO247 / Trans MOSFET N-CH Si 650V 27.6A 3-Pin(3+Tab) TO-247 Tube
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 27.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.5V @ 1.6mA
Gate Charge (Qg) (Maximum) @ Vgs 75nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3000pF @ 300V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 230W (Tc)
Rds On (Maximum) @ Id, Vgs 110 mOhm @ 13.8A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 796838-TK28N65W,S1F
Popularity Medium
Supply and Demand Status Limited
Family Name TK28N65W
ECCN EAR99
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK28N65W,S1F CAD Model

Description

The Toshiba Semiconductor and Storage TK28N65W,S1F MOSFET is a discrete semiconductor product.

  • Series: DTMOSIV
  • Maximum power dissipation: 230W
  • Drain source voltage: 650V
  • Gate charge: 75nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $45.1859 $90.3718
4+ $37.0755 $148.3020
5+ $35.9170 $179.5850
7+ $34.7586 $243.3102
9+ $33.6001 $302.4009
12+ $30.1236 $361.4832
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Availability: 7,400 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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