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Same model may have multiple batches, images only for reference.
BUK751R8-40E,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK751R8-40E,127

Part No BUK751R8-40E,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A TO220AB
Datasheet
BUK751R8-40E,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 145nC @ 10V
Max Input Capacitance 11340pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 349W (Tc)
Maximum Rds On at Id,Vgs 1.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1025223-BUK751R8-40E,127
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK751R8-40E,127 CAD Model

Description

The Nexperia USA Inc. BUK751R8-40E,127 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Manufacturer: Nexperia USA Inc.
  • Use: Designed for use in discrete semiconductor products
  • Mounting: Through hole
  • Packaging: Tube/rail
  • Maximum Power Dissipation: 349W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 120A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 145nC @ 10V
  • Maximum Rds On: 1.8 mOhm @ 25A, 10V
  • Product Status: Obsolete (EOL)
  • Status: Balanced supply and demand status

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