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BUK7526-100B,127

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Part No	BUK7526-100B,127
Manufacturer	Nexperia USA Inc.
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 49A TO220AB
Datasheet	BUK7526-100B,127 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Nexperia USA Inc.
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	100V
Continuous Drain Current at 25°C	49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 1mA
Max Gate Charge	38nC @ 10V
Max Input Capacitance	2891pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	157W (Tc)
Maximum Rds On at Id,Vgs	26 mOhm @ 25A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	TO-220AB
Dimension	TO-220-3
Win Source Part Number	1025227-BUK7526-100B,127
Popularity	Medium
Supply and Demand Status	Sufficient
Application Field	Used in Industrial
Quantity per package	50
Ultra Librarian 3D Model	Ultra Librarian BUK7526-100B,127 CAD Model

Alternative Products

Description

The Nexperia USA Inc. BUK7526-100B,127 is a MOSFET technology product with N-Channel polarity.

Polarity: N-Channel
Maximum Power Dissipation: 157W (Tc)
Packaging: Tube/Rail
Mounting: Through Hole
Status: Obsolete(EOL)
Temperature Range: -55°C to 175°C (TJ)
Case/Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current @ 25°C: 49A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 2891pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On @ Id,Vgs: 26 mOhm @ 25A, 10V

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