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Same model may have multiple batches, images only for reference.
BUK7618-55,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK7618-55,118

Part No BUK7618-55,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 57A D2PAK
Datasheet
BUK7618-55,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 2000pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025258-BUK7618-55,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK7618-55,118 CAD Model

Description

The Nexperia USA Inc. BUK7618-55,118 is a N-Channel MOSFET that can handle a power dissipation of up to 125W (Tc) and has a drain-source breakdown voltage of 55V.

  • Power Dissipation: 125W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 57A (Tc) @ 25°C
  • Maximum Rds On: 18 mOhm @ 25A, 10V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Input Capacitance: 2000pF @ 25V
  • Package: D2PAK
  • Drive Voltage: 10V
  • Operating Temperature Range: -55°C to 175°C (TJ)

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