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Same model may have multiple batches, images only for reference.
BUK763R4-30B,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK763R4-30B,118

Part No BUK763R4-30B,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A D2PAK
Datasheet
BUK763R4-30B,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 4951pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 255W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025278-BUK763R4-30B,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK763R4-30B,118 CAD Model

Description

The Nexperia USA Inc. 1025278-BUK763R4-30B,118 is a high-performance N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 75A at 25°C.

  • Manufacturer: Nexperia USA Inc.
  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 75A @ 25°C
  • Rds On: 3.4 mOhm @ 25A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: D2PAK
  • Popularity: Medium
  • Status: Balanced supply and demand status

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