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Same model may have multiple batches, images only for reference.
BUK764R0-75C,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK764R0-75C,118

Part No BUK764R0-75C,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 100A D2PAK
Datasheet
BUK764R0-75C,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 142nC @ 10V
Max Input Capacitance 11659pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 333W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025284-BUK764R0-75C,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK764R0-75C,118 CAD Model

Description

The Nexperia USA Inc. The supply and demand status of this product is balanced.

  • MOSFET Technology
  • Polarity: N-Channel
  • Power Dissipation: 333W (Tc)
  • Category: Discrete Semiconductor Product
  • Drive Voltage: 10V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: D2PAK
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current @ 25°C: 100A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Max Gate Charge: 142nC @ 10V
  • Max Input Capacitance: 11659pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 4 mOhm @ 25A, 10V

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