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BUK765R0-100E,118

Part No BUK765R0-100E,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 120A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 11810pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 357W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025286-BUK765R0-100E,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK765R0-100E,118 CAD Model

Description

The BUK765R0-100E,118 MOSFET from Nexperia USA Inc. is a N-Channel polarity transistor that is designed for use in discrete semiconductor products. Nexperia USA Inc..

  • Transistor Polarity: N-Channel
  • Package: D2PAK (TO-263-3, D2Pak (2 Leads + Tab), TO-263AB)
  • Drain-Source Breakdown Voltage: 100V
  • Operating Temperature Range: -55°C to 175°C
  • Maximum Power Dissipation: 357W (Tc)
  • Continuous Drain Current: 120A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 180nC @ 10V
  • Applications: DVD, HD, Set-Top Boxes, Recorders

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4926 $52.3890
35+ $2.8657 $100.2995
55+ $2.7762 $152.6910
75+ $2.6866 $201.4950
97+ $2.5971 $251.9187
129+ $2.3284 $300.3636
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Availability: 18,990 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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