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Same model may have multiple batches, images only for reference.
BUK78150-55A/CUX Real Image
Same model may have multiple batches, images only for reference.

BUK78150-55A/CUX

Part No BUK78150-55A/CUX
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 5.5A SOT223
Datasheet
BUK78150-55A/CUX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 230pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 8W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1025294-BUK78150-55A/CUX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK78150-55A/CUX CAD Model

Description

The Nexperia USA Inc. BUK78150-55A/CUX is an N-Channel MOSFET with a drain-source breakdown voltage of 55V.

  • Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 5.5A (Tc)
  • Maximum Power Dissipation: 8W (Tc)
  • Maximum Rds On @ 5A, 10V: 150 mOhm
  • Gate-Source Threshold Voltage @ 1mA: 4V
  • Maximum Input Capacitance @ 25V: 230pF
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Mounting: SMD (SMT)
  • Package: SOT-223
  • Supply and Demand Status: Balanced

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