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BUK963R2-40B,118

Part No BUK963R2-40B,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Cut Reel
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 93.4nC @ 5V
Max Input Capacitance 10502pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025391-BUK963R2-40B,118
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BUK963R2-40B,118 CAD Model

Description

The Nexperia USA Inc. BUK963R2-40B,118 is a N-Channel MOSFET suitable for use in a wide range of applications.

  • Manufacturer: Nexperia USA Inc.
  • Type: N-Channel MOSFET
  • Use: Suitable for use in a wide range of applications.
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 100A @ 25°C
  • Maximum Power Dissipation: 300W (Tc)
  • Maximum Rds On: 2.8 mOhm @ 25A, 10V
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Gate Charge: 93.4nC @ 5V
  • Maximum Input Capacitance: 10502pF @ 25V
  • Maximum Gate-Source Voltage: ±15V
  • Package: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Popularity: Medium
  • Status: Balanced

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