The BUK9Y8R7-60E,115 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Nexperia. It's designed for high-efficiency switching applications, offering low on-state resistance (RDS(on)) to minimize power losses and improve overall system efficiency. This MOSFET is commonly used in various power management and motor control circuits.

Applications

• DC-DC converters
• Motor control circuits
• Load switches
• Power management in portable devices
• Automotive applications

Features

• TrenchMOS technology
• Low on-state resistance (RDS(on))
• Logic level gate drive
• Avalanche rated
• Automotive qualified (AEC-Q101)

Benefits

• High energy efficiency due to low RDS(on)
• Simplified gate drive circuitry
• Robust performance in demanding applications
• Suitable for automotive environments
• Reduces power dissipation and heat generation

Technical Specifications

The BUK9Y8R7-60E,115 features a drain-source voltage (VDS) of 60V, a continuous drain current (ID) of up to 84A (depending on the mounting and cooling conditions), and a typical on-state resistance (RDS(on)) of 8.7 mΩ at VGS = 10V. The gate-source threshold voltage (VGS(th)) is typically between 1V and 2.5V. It comes in a LFPAK56D (Power-SO8) package for efficient heat dissipation. The operating junction temperature range is -55°C to +175°C. The total gate charge (Qg) is typically around 28 nC.

The logic level gate drive makes it compatible with microcontrollers and other low-voltage control circuits, simplifying the design and reducing the need for external gate drivers. It's important to refer to the official Nexperia datasheet for precise electrical characteristics, thermal resistance, and package dimensions to ensure proper design and operation within the intended application.