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Same model may have multiple batches, images only for reference.
GAN140-650FBEZ Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

GAN140-650FBEZ

Part No GAN140-650FBEZ
Manufacturer Nexperia USA Inc.
Catalog FETs - Single
Description 650 V, 140 MOHM GALLIUM NITRIDE
Datasheet
GAN140-650FBEZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202238-GAN140-650FBEZ
Manufacturer Nexperia USA Inc.
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package DFN5060-5
Ultra Librarian 3D Model Ultra Librarian GAN140-650FBEZ CAD Model

Description

The GaNFET (Gallium Nitride) MOSFETs are discrete semiconductor products manufactured by Nexperia USA Inc.

  • Packaging: Tape & Reel (TR) and Cut Tape (CT)
  • Channel Type: N-channel FET
  • Vdss: 650V
  • Operating Temperature Range: -55°C to 150°C
  • Package: DFN5060-5 with wettable flank
  • Status: Active

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41+ $6.1755 $253.1955
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