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Same model may have multiple batches, images only for reference.
MJD42C-QJ Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

MJD42C-QJ

Part No MJD42C-QJ
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 6A DPAK
Datasheet
MJD42C-QJ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q100
Package Tape & Reel
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 6 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max) 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 4V
Power - Max 1.6 W
Frequency - Transition 3MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number MJD42
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1377138-MJD42C-QJ
Ultra Librarian 3D Model Ultra Librarian MJD42C-QJ CAD Model

Description

The MJD42C-QJ is a PNP transistor manufactured by Nexperia USA Inc.

  • Series: Automotive, AEC-Q100
  • Application: Discrete Semiconductor Products
  • Package: TO-252-3, DPak
  • Mounting Type: Surface Mount
  • Collector Current (Ic): 6 A
  • Collector-Emitter Breakdown Voltage: 100 V
  • DC Current Gain (hFE): 30 @ 300mA and 4V
  • Vce Saturation: 1.5V @ 600mA and 6A
  • Cutoff Current: 1µA
  • Transition Frequency: 3MHz
  • Power Rating: 1.6 W
  • Status: Active

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