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NX1029X,115

Part No NX1029X,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 60V/50V SOT666
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V, 50V
Continuous Drain Current at 25°C 330mA, 170mA
Maximum Rds On at Id,Vgs 7.5 Ohm @ 100mA, 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 0.35nC @ 5V
Max Input Capacitance 36pF @ 25V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 1084166-NX1029X,115
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Safety, Industrial, Power Management, Consumer Electronics, Portable Devices
Ultra Librarian 3D Model Ultra Librarian NX1029X,115 CAD Model

Description

The Nexperia USA Inc. NX1029X,115 is an N and P-channel FET manufactured by Nexperia USA Inc.

  • Packaging: Reel-Tray
  • Mounting: SMD (SMT)
  • Gate Type: Logic Level
  • Power Dissipation: 500mW
  • Breakdown Voltage: 60V, 50V
  • Continuous Drain Current: 330mA, 170mA @ 25°C
  • Maximum Rds On: 7.5 Ohm @ 100mA, 10V
  • Applications: Safety, Industrial, Power Management, Consumer Electronics, and Portable Devices

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3628 $58.0480
345+ $0.3395 $117.1275
530+ $0.3278 $173.7340
760+ $0.3044 $231.3440
990+ $0.2927 $289.7730
1,235+ $0.2809 $346.9115
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 101,900 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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