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NX3020NAKW,115

Part No NX3020NAKW,115
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 180MA SOT323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.44nC @ 4.5V
Max Input Capacitance 13pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 260mW (Ta), 1.1W (Tc)
Maximum Rds On at Id,Vgs 4.5 Ohm @ 100mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323-3
Dimension SC-70, SOT-323
Win Source Part Number 1084197-NX3020NAKW,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NX3020NAKW,115 CAD Model

Description

The Nexperia USA Inc. NX3020NAKW,115 is an N-channel MOSFET transistor, designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 260mW (Ta), 1.1W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 180mA (Ta)
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 4.5 Ohm @ 100mA, 10V
  • Mounting: SMD (SMT)
  • Case / Package: SOT-323-3
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,170+ $0.0429 $50.1930
2,495+ $0.0401 $100.0495
3,870+ $0.0388 $150.1560
5,545+ $0.0361 $200.1745
7,205+ $0.0347 $250.0135
8,985+ $0.0334 $300.0990
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 1170 pcs
Order Increment : 1 pcs
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