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Same model may have multiple batches, images only for reference.
PBSS4112PANP,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS4112PANP,115

Part No PBSS4112PANP,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 120V 1A 6HUSON
Datasheet
PBSS4112PANP,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q100
Package Tape & Reel
Product Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 120mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 500mA, 2V
Power - Max 510mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Supplier Device Package 6-HUSON (2x2)
Base Product Number PBSS4112
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1377233-PBSS4112PANP,115
Ultra Librarian 3D Model Ultra Librarian PBSS4112PANP,115 CAD Model

Description

The PBSS4112PANP,115 is a bipolar transistor array manufactured by Nexperia USA Inc.

  • Series: Automotive, AEC-Q100
  • Mounting Type: surface mount
  • Package: 6-UFDFN Exposed Pad
  • Transistor Type: NPN and PNP
  • Maximum Collector Current: 1A
  • Maximum Collector-Emitter Breakdown Voltage: 120V
  • DC Current Gain: 60 @ 500mA and 2V
  • Vce Saturation: 120mV @ 50mA and 500mA
  • Frequency Transition: 120MHz
  • Maximum Power: 510mW

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Quantity Unit Price Ext. Price
3+ $21.9925 $65.9775
6+ $18.0452 $108.2712
9+ $17.4813 $157.3317
12+ $16.9173 $203.0076
16+ $16.3534 $261.6544
21+ $14.6617 $307.8957
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