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Same model may have multiple batches, images only for reference.
SSM6N48FU,RF(D Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6N48FU,RF(D

Part No SSM6N48FU,RF(D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Rds On (Max) @ Id, Vgs 3.2Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds 15.1pF @ 3V
Power - Max 300mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
Base Product Number SSM6N48
Other Names SSM6N48FURF(D
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278537-SSM6N48FU,RF(D
Ultra Librarian 3D Model Ultra Librarian SSM6N48FU,RF(D CAD Model

Description

The SSM6N48FU, RF(D) is a dual N-channel MOSFET array manufactured by Toshiba Semiconductor and Storage.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id) @ 25°C: 100mA (Ta)

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