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Same model may have multiple batches, images only for reference.
PBSS4230PAN,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS4230PAN,115

Part No PBSS4230PAN,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS 30V 2A 6HUSON
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel
Current - Collector (Ic) (Maximum) 2A
Voltage - Collector Emitter Breakdown (Maximum) 30V
Vce Saturation (Maximum) at Ib, Ic 290mV at 200mA, 2A
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 200 at 1A, 2V
Maximum Power 510mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C
Mounting Style SMD
Manufacturer Package 6-UDFN Exposed Pad
Supplier Device Package 6-HUSON-EP (2x2)
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 755522-PBSS4230PAN,115
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PBSS4230PAN,115 CAD Model

Description

The Nexperia USA Inc. PBSS4230PAN,115 is a transistor type with a frequency transition of 120MHz.

  • Frequency Transition: 120MHz
  • Package: reel
  • Mounting: SMD
  • Maximum Current Collector (Ic): 2A
  • Maximum Voltage Collector Emitter Breakdown: 30V
  • Maximum Current Collector Cutoff: 100nA (ICBO)
  • Voltage Saturation (Maximum): 290mV @ 200mA, 2A
  • DC Current Gain (hFE) (Minimum): 200 @ 1A, 2V
  • Category: Discrete Semiconductor Products
  • Popularity: low
  • Maximum Power: 510mW

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