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PBSS4260QAZ

Part No PBSS4260QAZ
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS NPN 60V 2A DFN1010D-3  /  Bipolar (BJT) Transistor NPN 60 V 2 A 180MHz 325 mW Surface Mount DFN1010D-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Nexperia USA Inc.
Package Tape & Reel
Transistor Type NPN
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 190mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2A, 2V
Power - Max 325 mW
Frequency - Transition 180MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3
Base Product Number PBSS4260
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names 568-12680-6-ND,568-12680-2-ND,PBSS4260QA,147,PBSS4260QA,568-10935-6-ND,1727-1464-1-ND,568-12680-6,568-10935-2-ND,PBSS4260QAZ-ND,568-12680-1,NEXNXPPBSS4260QAZ,568-12680-2,568-12680-1-ND,1727-1464-2-ND,1727-1464-1,568-10935-2,568-10935-1,568-10935-6,568-10935-1-ND,1727-1464-6-ND,1727-2381-6,1727-1464-6,2156-PBSS4260QAZ-NEX,1727-2381-2,1727-1464-2,934067162147,1727-2381-1
Standard Package 5,000
Win Source Part Number 992796-PBSS4260QAZ
Ultra Librarian 3D Model Ultra Librarian PBSS4260QAZ CAD Model

Description

The PBSS4260QAZ is an NPN transistor that is designed for use in Discrete Semiconductor Products.

  • Manufacturer: Nexperia USA Inc.
  • Maximum Power Rating: 325 mW
  • Maximum Collector-Emitter Breakdown Voltage: 60 V
  • Maximum Collector Current: 2 A
  • Transistor Type: NPN
  • Vce Saturation: 190mV @ 50mA, 1A
  • DC Current Gain (hFE): 40 @ 2A, 2V
  • Frequency Transition: 180MHz
  • Package: 3-XDFN exposed pad
  • Temperature Range: -55°C to 150°C (TJ)

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