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Same model may have multiple batches, images only for reference.
PBSS5230PAP,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PBSS5230PAP,115

Part No PBSS5230PAP,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 30V 2A 6HUSON
Datasheet
PBSS5230PAP,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 420mv @ 100mA, 2A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 160 @ 1A, 2V
Maximum Power Dissipation 510mW
Frequency - Transition 95MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN2020-6
Win Source Part Number 1086508-PBSS5230PAP,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PBSS5230PAP,115 CAD Model

Description

The Nexperia USA Inc. PBSS5230PAP,115 is a dual PNP transistor with a maximum current collector of 2A and a VCEO maximum collector-emitter breakdown voltage of 30V.

  • Maximum Current Collector: 2A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
  • Max Vce (sat): 420mv @ 100mA, 2A
  • Typical Gain (hFE) (Min): 160 @ 1A, 2V

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