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PBSS5230PAP,115

Part No PBSS5230PAP,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 30V 2A 6HUSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 420mv @ 100mA, 2A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 160 @ 1A, 2V
Maximum Power Dissipation 510mW
Frequency - Transition 95MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN2020-6
Win Source Part Number 1086508-PBSS5230PAP,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PBSS5230PAP,115 CAD Model

Description

The Nexperia USA Inc. PBSS5230PAP,115 is a dual PNP transistor with a maximum current collector of 2A and a VCEO maximum collector-emitter breakdown voltage of 30V.

  • Maximum Current Collector: 2A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
  • Max Vce (sat): 420mv @ 100mA, 2A
  • Typical Gain (hFE) (Min): 160 @ 1A, 2V

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