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Same model may have multiple batches, images only for reference.
PBSS5260PAPSX Real Image
Same model may have multiple batches, images only for reference.

PBSS5260PAPSX

Part No PBSS5260PAPSX
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 60V 2A 6HUSON / Trans GP BJT PNP 60V 2A 700mW Automotive 6-Pin DFN-D EP T/R
Datasheet
PBSS5260PAPSX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101
Packaging Reel package
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Maximum) 2A
Voltage - Collector Emitter Breakdown (Maximum) 60V
Vce Saturation (Maximum) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 110 @ 1A, 2V
Power - Max 370mW
Frequency - Transition 100MHz
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package 6-UDFN Exposed Pad
Manufacturer Package DFN2020D-6
Win Source Part Number 791390-PBSS5260PAPSX
Popularity Medium
Supply and Demand Status Balance
Family Name PBSS5260PAPS
ECCN EAR99
Country of Origin China
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian PBSS5260PAPSX CAD Model

Description

The Nexperia PBSS5260PAPSX is a dual PNP transistor that is part of the Automotive, AEC-Q101 series. It is designed to operate at a maximum collector current of 2A and a collector-emitter breakdown voltage of 60V. The device has a maximum power dissipation of 370mW and a frequency transition of 100MHz. The PBSS5260PAPSX is packaged in 6-UDFN Exposed Pad and has a DC current gain (hFE) of 110 @ 1A and 2V. This device is ideal for use in discrete semiconductor products.

  • Maximum Collector Current: 2A
  • Collector-Emitter Breakdown Voltage: 60V
  • Maximum Power Dissipation: 370mW
  • Frequency Transition: 100MHz
  • DC Current Gain (hFE): 110 @ 1A, 2V

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