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Same model may have multiple batches, images only for reference.
PDTA114YMB,315
Same model may have multiple batches, images only for reference.

PDTA114YMB,315

Part No PDTA114YMB,315
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description PDTA114YMB - PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package DFN
Collector Emitter Breakdown Voltage 50 V
Collector Emitter Voltage (VCEO) 100 mV
Element Configuration Single
Max Collector Current 100 mA
Maximum Operating Temperature 150 °C
Max Power Dissipation 250 mW
Min Operating Temperature -65 °C
Mount Surface Mount
Number of Pins 3
Packaging Tape & Reel (TR)
Radiation Hardening No
RoHS Compliant
Transition Frequency 180 MHz
Win Source Part Number 962176-PDTA114YMB,315
Categories RF Transistors(BJT)
Manufacturer Nexperia USA Inc.
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian PDTA114YMB,315 CAD Model

Description

The PDTA114YMB,315 is an RF Transistor (BJT) from Nexperia USA Inc.

  • Product: PDTA114YMB,315
  • Manufacturer: Nexperia USA Inc.
  • Type: RF Transistor (BJT)
  • Popularity: Low
  • Supply and Demand: Shortage
  • Maximum Operating Temperature: 150°C
  • Minimum Operating Temperature: -65°C
  • Mounting Type: Surface Mount
  • Package/Case: DFN
  • Element Configuration: Single
  • Maximum Power Dissipation: 250 mW
  • Collector Emitter Breakdown Voltage: 50 V
  • Collector Emitter Voltage (VCEO): 100 mV
  • Max Collector Current: 100 mA
  • Transition Frequency: 180 MHz

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