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Same model may have multiple batches, images only for reference.
PDTA123JT,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTA123JT,215

Part No PDTA123JT,215
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 250MW TO236AB
Datasheet
PDTA123JT,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Cut Reel
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 100 @ 10mA, 5V
Max Vce (sat) 100mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Win Source Part Number 1087171-PDTA123JT,215
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PDTA123JT,215 CAD Model

Description

The Nexperia USA Inc. PDTA123JT,215 is a PNP pre-biased transistor with a cut reel packaging.

  • Mounting: SMD (SMT)
  • Part Category: Discrete Semiconductor Products
  • Transistor Polarity: PNP
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • Frequency-Transition: Not Specified
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 100mV @ 250μA, 5mA
  • Collector Cut-off Current (Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 100 @ 10mA, 5V
  • Maximum Power Dissipation: 250mW
  • Status: Active
  • Case/Package: TO-236AB (SOT23)
  • Supply and Demand Status: Sufficient

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3,015+ $0.0332 $100.0980
4,675+ $0.0321 $150.0675
6,715+ $0.0298 $200.1070
8,715+ $0.0287 $250.1205
10,870+ $0.0276 $300.0120
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