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Same model may have multiple batches, images only for reference.
PDTC115TU,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTC115TU,115

Part No PDTC115TU,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SOT323
Datasheet
PDTC115TU,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 100k
Typical Gain (hFE) (Min) 100 @ 1mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-323-3
Win Source Part Number 1087211-PDTC115TU,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PDTC115TU,115 CAD Model

Description

The Nexperia USA Inc. PDTC115TU,115 is an NPN pre-biased transistor with a surface-mount device (SMD) mounting type.

  • Mounting Type: Surface Mount Device (SMD)
  • Package: SOT-323-3
  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 150mV @ 250μA and 5mA
  • Collector Cut-Off Current: 1μA
  • Typical Gain: 100 @ 1mA and 5V
  • Maximum Power Dissipation: 200mW

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