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Same model may have multiple batches, images only for reference.
PDTC123YU,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTC123YU,115

Part No PDTC123YU,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SOT323
Datasheet
PDTC123YU,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 35 @ 5mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-323-3
Win Source Part Number 1087219-PDTC123YU,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PDTC123YU,115 CAD Model

Description

The PDTC123YU,115 is an NPN transistor manufactured by Nexperia USA Inc.

  • Category: Discrete Semiconductor Products
  • Mounting Type: SMD (SMT)
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Typical Gain (hFE): 35 @ 5mA, 5V
  • Maximum Power Dissipation: 200mW
  • Collector Cut-Off Current: 1μA
  • Maximum Vce (sat): 150mV @ 500μA, 10mA

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