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Same model may have multiple batches, images only for reference.
PDTC143EU,115 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTC143EU,115

Part No PDTC143EU,115
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SOT323
Datasheet
PDTC143EU,115 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 150mV @ 500μA, 10mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-323-3
Win Source Part Number 1035594-PDTC143EU,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PDTC143EU,115 CAD Model

Description

The Nexperia USA Inc. PDTC143EU,115 is an NPN pre-biased transistor designed for use in discrete semiconductor products.

  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Typical Gain (hFE): 30 @ 10mA and 5V
  • Collector Cut-off Current: 1μA
  • Saturation Voltage: 150mV @ 500μA and 10mA
  • Base and Emitter-Base Resistors: 4.7k Ohms
  • Temperature Range: -65°C to 150°C
  • Maximum Power Dissipation: 200mW
  • Package: SOT-323-3
  • Packaging: Reel - TR
  • Market Popularity: Popular
  • Supply and Demand Status: Sufficient

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