The PDTD113EUX is an NPN pre-biased transistor that features a maximum power dissipation of 300 mW and a collector-emitter breakdown voltage of 50 V.

• Maximum Collector Current: 500 mA
• Category: Discrete semiconductor products such as transistors, bipolar junction transistors, and pre-biased transistors
• Package: SOT-323
• DC Current Gain: 33 @ 50 mA and 5 Vce
• Frequency Transition: 225 MHz
• Operating Temperature: -55 °C to 150 °C
• Reliability: High-performance transistor that can be used in a variety of electronic devices.