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2SA1246

Part No 2SA1246
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Catalog Transistors (BJT) - Single
Description High-VEBO,AF  Amp Applications
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer SANYO Semiconductor (U.S.A) Corporation
Win Source Part Number 1124385-2SA1246
Manufacturer Homepage www.ssdc-jp.com/eng/
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Ultra Librarian 3D Model Ultra Librarian 2SA1246 CAD Model

Description

The 2SA1246 is a PNP bipolar junction transistor (BJT) manufactured by SANYO Semiconductor (U.S.A) Corporation. It's designed for various amplifier and switching applications in electronic circuits. This transistor is commonly used in audio amplifiers, high-frequency circuits, and general-purpose switching circuits.

Applications:

  • Audio Amplifiers: Used in preamplifiers, power amplifiers, and equalizer circuits.
  • High-Frequency Circuits: Suitable for use in RF amplifiers, mixers, and oscillators.
  • Switching Circuits: Employed in switching regulators, DC-DC converters, and load switches.
  • General-Purpose Amplification: Can be used in a wide range of signal amplification applications.
  • Line output circuits.

Features:

  • PNP Polarity: Allows for use in complementary circuits with NPN transistors.
  • Low Saturation Voltage: Reduces power dissipation and improves efficiency.
  • High Current Gain (hFE): Provides good amplification characteristics.
  • Low Noise Figure: Ensures low noise performance in sensitive amplifier circuits.
  • Compact Package: Facilitates high-density circuit board designs.

Benefits:

  • Improved Audio Quality: Delivers clean and accurate audio amplification.
  • Efficient Switching: Reduces power loss in switching applications.
  • Versatile Application: Suitable for a wide range of amplification and switching tasks.
  • Reliable Performance: Offers stable and consistent performance in various operating conditions.
  • Simplified Circuit Design: Can be easily integrated into existing circuit designs.

Additional Details:

The 2SA1246 transistor typically has a collector-emitter voltage (VCEO) rating of -50V, a collector current (IC) rating of -150mA, and a power dissipation (PD) rating of 0.5W. Its current gain (hFE) is typically between 100 and 300, providing good amplification capability. The transistor is available in a through-hole package. This transistor is often used in pairs with complementary NPN transistors to create push-pull amplifier stages. It is known for its low distortion and excellent linearity, making it suitable for high-fidelity audio applications. The transition frequency (fT) is high enough for usage in RF circuits.

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