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Same model may have multiple batches, images only for reference.
PDTD123ET,215 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTD123ET,215

Part No PDTD123ET,215
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW TO236AB / Trans Digital BJT NPN 50V 500mA 250mW Automotive 3-Pin SOT-23 T/R
Datasheet
PDTD123ET,215 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel package
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Maximum) 500mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
DC Current Gain (hFE) (Minimum) @ Ic, Vce 40 @ 50mA, 5V
Vce Saturation (Maximum) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Maximum) 500nA
Power - Max 250mW
Mounting SMD
Package TO-236-3, SC-59, SOT-23-3
Manufacturer Package TO-236AB (SOT23)
Win Source Part Number 791618-PDTD123ET,215
Popularity Medium
Supply and Demand Status Balance
Family Name PDTD123ET
Introduction Date April 08, 2005
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian PDTD123ET,215 CAD Model

Description

The Nexperia PDTD123ET is an NPN pre-biased transistor from Nexperia USA Inc..

  • Package: TO-236-3, SC-59, SOT-23-3
  • Maximum Power Dissipation: 250mW
  • Maximum Collector-Emitter Voltage: 50V
  • Minimum DC Current Gain: 40 @ 50mA, 5V
  • Compliance: Halogen-Free
  • Alternative Parts: DTD123TCT116, DTD123ECT116, DTD114GCT116, DTD123EKFRAT146
  • Estimated End-of-Life Date: 2027

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