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Same model may have multiple batches, images only for reference.
TPH1R104PB,L1XHQ
Same model may have multiple batches, images only for reference.

TPH1R104PB,L1XHQ

Part No TPH1R104PB,L1XHQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A 8SOP / N-Channel 40 V 120A (Ta) 960mW (Ta), 132W (Tc) Surface Mount 8-SOP Advance (5x5)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.14mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4560 pF @ 10 V
Power Dissipation (Max) 960mW, 132W (Tc)
Temperature Range - Operating 175°C
Mounting Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Case / Package 8-SOIC (0.197", 5.00mm Width)
Base Product Number TPH1R104
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number 264-TPH1R104PBL1XHQCT,264-TPH1R104PBL1XHQTR,TPH1R104PB,L1XHQ(O,264-TPH1R104PBL1XHQDKR
Standard Package 5,000
Win Source Part Number 1325315-TPH1R104PB,L1XHQ
Ultra Librarian 3D Model Ultra Librarian TPH1R104PB,L1XHQ CAD Model

Description

The Toshiba Semiconductor and Storage TPH1R104PB,L1XHQ is an N-channel MOSFET transistor that is suitable for use in power switching applications.

  • Drain to Source Voltage: 40 V
  • Continuous Drain Current: 120 A @ 25°C
  • Maximum On-Resistance: 1.14 mΩ @ 60 A and 10 V gate-source voltage
  • Gate Charge: 55 nC @ 10 V
  • Input Capacitance: 4560 pF @ 10 V
  • Mounting: Surface Mount
  • Package: 8-SOP Advance package
  • Maximum Junction Temperature: 175°C

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