The PMV28ENEAR is an N-channel MOSFET transistor from Nexperia USA Inc. with a drain to source voltage of 30V and a power dissipation of 660mW (Ta), 8.3W (Tc).

• Drain to Source Voltage: 30V
• Power Dissipation: 660mW (Ta), 8.3W (Tc)
• Package: Surface mount TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB
• Vgs (Max): ±20V
• Temperature Range: -55°C ~ 175°C (TJ)
• Applications: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs applications
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
• Rds On (Max) @ Id, Vgs: 37mOhm @ 4.4A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V